• SK Hynix mass-produces 321-layer QLC NAND flash memory

SK Hynix mass-produces 321-layer QLC NAND flash memory

On August 25, 2025, SK Hynix announced the successful development and mass production of the world’s first 321-layer 2Tb QLC NAND flash memory, scheduled for release in the first half of next year. By expanding its “planar” architecture to six planes, this product significantly enhances parallel processing capabilities, achieving high capacity while significantly improving performance: data transfer speeds are doubled, write performance increases by 56%, read performance by 18%, and energy efficiency is improved by over 23%.

This flash memory will initially be used in PC SSDs, followed by expansion into data center eSSDs and smartphone storage. Leveraging its higher integration density and cost advantages, SK Hynix will focus on the AI ​​server market and strengthen its high-capacity product portfolio to meet the high-performance, low-power storage needs of AI and data centers.