SSM6J511NU,LF

MOSFET P-CH 12V 14A 6UDFNB


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    SPECIFICATION

    Category
    Discrete Semiconductor Products
    Transistors
    FETs, MOSFETs
    Single FETs, MOSFETs
    Mfr
    Toshiba Semiconductor and Storage
    Series
    U-MOSVII
    Packaging
    Tape & Reel (TR)
    Cut Tape (CT)
    Digi-Reel®
    Part Status
    Active
    FET Type
    P-Channel
    Technology
    MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss)
    12 V
    Current – Continuous Drain (Id) @ 25°C
    14A (Ta)
    Rds On (Max) @ Id, Vgs
    9.1mOhm @ 4A, 8V
    Vgs(th) (Max) @ Id
    1V @ 1mA
    Gate Charge (Qg) (Max) @ Vgs
    47 nC @ 4.5 V
    Input Capacitance (Ciss) (Max) @ Vds
    3350 pF @ 6 V
    FET Feature
    Operating Temperature
    -55°C ~ 150°C (TJ)
    Grade
    Qualification
    Mounting Type
    Surface Mount
    Supplier Device Package
    6-UDFNB (2×2)
    Package / Case
    6-WDFN Exposed Pad
    Base Product Number
    SSM6J511