IMW120R060M1HXKSA1
INQUIRY ONLINE
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Packaging
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Tube
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Part Status
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Active
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FET Type
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N-Channel
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Technology
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SiCFET (Silicon Carbide)
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Drain to Source Voltage (Vdss)
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1200 V
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Current – Continuous Drain (Id) @ 25°C
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36A (Tc)
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Drive Voltage (Max Rds On, Min Rds On)
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15V, 18V
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Rds On (Max) @ Id, Vgs
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78mOhm @ 13A, 18V
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Vgs(th) (Max) @ Id
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5.7V @ 5.6mA
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Gate Charge (Qg) (Max) @ Vgs
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31 nC @ 18 V
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Vgs (Max)
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+23V, -7V
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Input Capacitance (Ciss) (Max) @ Vds
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1060 pF @ 800 V
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FET Feature
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–
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Power Dissipation (Max)
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150W (Tc)
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Operating Temperature
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-55°C ~ 175°C (TJ)
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Grade
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–
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Qualification
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–
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Mounting Type
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Through Hole
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Supplier Device Package
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PG-TO247-3-41
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Package / Case
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Base Product Number
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IMW120
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