FF200R12KS4PHOSA1
INQUIRY ONLINE
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Category
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Discrete Semiconductor Products
Transistors
IGBTs
IGBT Modules
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Manufacturer
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Infineon Technologies
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Series
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–
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Packaging
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Tray
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Part Status
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Active
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IGBT Type
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–
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Configuration
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Half Bridge
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Voltage – Collector Emitter Breakdown (Max)
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1200 V
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Current – Collector (Ic) (Max)
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275 A
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Power – Max
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1400 W
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Vce(on) (Max) @ Vge, Ic
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3.7V @ 15V, 200A
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Current – Collector Cutoff (Max)
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5 mA
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Input Capacitance (Cies) @ Vce
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13 nF @ 25 V
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Input
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Standard
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NTC Thermistor
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No
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Operating Temperature
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-40°C ~ 125°C
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Mounting Type
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Chassis Mount
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Package / Case
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Module
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Supplier Device Package
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Module
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Base Product Number
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FF200R12
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