IRLML5203
INQUIRY ONLINE
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Category
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Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
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Mfr
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Infineon Technologies
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Series
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HEXFET®
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Packaging
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Tube
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Part Status
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Obsolete
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FET Type
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P-Channel
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Technology
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MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss)
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30 V
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Current – Continuous Drain (Id) @ 25°C
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3A (Ta)
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Drive Voltage (Max Rds On, Min Rds On)
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4.5V, 10V
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Rds On (Max) @ Id, Vgs
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98mOhm @ 3A, 10V
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Vgs(th) (Max) @ Id
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2.5V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs
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14 nC @ 10 V
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Vgs (Max)
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±20V
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Input Capacitance (Ciss) (Max) @ Vds
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510 pF @ 25 V
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FET Feature
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–
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Power Dissipation (Max)
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1.25W (Ta)
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Grade
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–
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Qualification
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–
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Mounting Type
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Surface Mount
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Supplier Device Package
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Micro3™/SOT-23
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Package / Case
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TO-236-3, SC-59, SOT-23-3
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