NTH4L025N065SC1
INQUIRY ONLINE
|
Packaging
|
Tube
|
|
|
Part Status
|
Active
|
|
|
FET Type
|
N-Channel
|
|
|
Technology
|
SiCFET (Silicon Carbide)
|
|
|
Drain to Source Voltage (Vdss)
|
650 V
|
|
|
Current – Continuous Drain (Id) @ 25°C
|
99A (Tc)
|
|
|
Drive Voltage (Max Rds On, Min Rds On)
|
15V, 18V
|
|
|
Rds On (Max) @ Id, Vgs
|
28.5mOhm @ 45A, 18V
|
|
|
Vgs(th) (Max) @ Id
|
4.3V @ 15.5mA
|
|
|
Gate Charge (Qg) (Max) @ Vgs
|
164 nC @ 18 V
|
|
|
Vgs (Max)
|
+22V, -8V
|
|
|
Input Capacitance (Ciss) (Max) @ Vds
|
3480 pF @ 15 V
|
|
|
FET Feature
|
–
|
|
|
Power Dissipation (Max)
|
348W (Tc)
|
|
|
Operating Temperature
|
-55°C ~ 175°C (TJ)
|
|
|
Grade
|
–
|
|
|
Qualification
|
–
|
|
|
Mounting Type
|
Through Hole
|
|
|
Supplier Device Package
|
TO-247-4L
|