IPW65R099C6FKSA1
INQUIRY ONLINE
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Packaging
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Tube
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Part Status
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Not For New Designs
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FET Type
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N-Channel
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Technology
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MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss)
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650 V
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Current – Continuous Drain (Id) @ 25°C
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38A (Tc)
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Drive Voltage (Max Rds On, Min Rds On)
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10V
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Rds On (Max) @ Id, Vgs
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99mOhm @ 12.8A, 10V
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Vgs(th) (Max) @ Id
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3.5V @ 1.2mA
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Gate Charge (Qg) (Max) @ Vgs
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127 nC @ 10 V
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Vgs (Max)
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±20V
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Input Capacitance (Ciss) (Max) @ Vds
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2780 pF @ 100 V
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FET Feature
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–
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Power Dissipation (Max)
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278W (Tc)
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Operating Temperature
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-55°C ~ 150°C (TJ)
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Grade
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–
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Qualification
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–
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Mounting Type
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Through Hole
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Supplier Device Package
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PG-TO247-3-1
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Package / Case
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TO-247-3
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Base Product Number
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IPW65R099
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