IDH10G65C5XKSA2

DIODE SIL CARB 650V 10A PGTO2201


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    SPECIFICATION

    Packaging
    Tube
    Part Status
    Active
    Technology
    SiC (Silicon Carbide) Schottky
    Voltage – DC Reverse (Vr) (Max)
    650 V
    Current – Average Rectified (Io)
    10A
    Voltage – Forward (Vf) (Max) @ If
    1.7 V @ 10 A
    Speed
    No Recovery Time > 500mA (Io)
    Reverse Recovery Time (trr)
    0 ns
    Current – Reverse Leakage @ Vr
    180 µA @ 650 V
    Capacitance @ Vr, F
    300pF @ 1V, 1MHz
    Mounting Type
    Through Hole
    Package / Case
    TO-220-2
    Supplier Device Package
    PG-TO220-2-1
    Operating Temperature – Junction
    -55°C ~ 175°C
    Base Product Number
    IDH10G65