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Category |
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
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Mfr |
Infineon Technologies |
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Series |
HEXFET® |
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Packaging |
Tube
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Part Status |
Obsolete
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FET Type |
P-Channel |
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Technology |
MOSFET (Metal Oxide) |
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Drain to Source Voltage (Vdss) |
30 V
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Current - Continuous Drain (Id) @ 25°C |
3A (Ta) |
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Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V
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Rds On (Max) @ Id, Vgs |
98mOhm @ 3A, 10V
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Vgs(th) (Max) @ Id |
2.5V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs |
14 nC @ 10 V
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Vgs (Max) |
±20V
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Input Capacitance (Ciss) (Max) @ Vds |
510 pF @ 25 V
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FET Feature |
-
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Power Dissipation (Max) |
1.25W (Ta)
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Grade |
-
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Qualification |
-
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Mounting Type |
Surface Mount
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Supplier Device Package |
Micro3™/SOT-23
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Package / Case |
TO-236-3, SC-59, SOT-23-3 |